IPB80N06S3-07
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N06S3-07 is an N-channel power MOSFET designed for high-efficiency power conversion applications. This device features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 80A at 25°C (Tc), with a maximum power dissipation of 135W (Tc). The low on-resistance (Rds On) of 6.5mOhm is achieved at 51A and a gate-source voltage (Vgs) of 10V, facilitated by the 10V drive voltage. Key parameters include a gate charge (Qg) of 170nC at 10V and input capacitance (Ciss) of 7768pF at 25V. The IPB80N06S3-07 is housed in a PG-TO263-3-2 surface-mount package, also known as TO-263AB, and is supplied on a Tape & Reel. Its robust design supports an operating temperature range of -55°C to 175°C. This component is widely utilized in automotive, industrial power supply, and electric vehicle applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7768 pF @ 25 V |
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