IPB80N06S2L11ATMA1
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB80N06S2L11ATMA1, features a 55V drain-source breakdown voltage and a continuous drain current of 80A at 25°C (Tc). This device offers a low on-resistance of 10.7mOhm maximum at 60A and 10V Vgs, with a maximum power dissipation of 158W (Tc). The transistor is housed in a PG-TO263-3-2 surface mount package, also known as TO-263AB. Key parameters include a gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 2075 pF at 25V. Designed for high-efficiency switching applications, this MOSFET is suitable for use in power supplies, motor control, and automotive systems. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 93µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2075 pF @ 25 V |
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