IPB80N06S2L09ATMA2
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB80N06S2L09ATMA2, offers a 55V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). This surface mount device, packaged in a TO-263-3 (PG-TO263-3-2) configuration, features a low on-resistance of 8.2mOhm maximum at 52A and 10V Vgs. With a maximum power dissipation of 190W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for demanding applications. Key parameters include input capacitance (Ciss) of 2620pF maximum at 25V and gate charge (Qg) of 105nC maximum at 10V. This component is utilized across various industries including automotive, industrial power, and computing.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 52A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 125µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2620 pF @ 25 V |
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