IPB80N06S2L09ATMA1
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the OptiMOS™ IPB80N06S2L09ATMA1, an N-Channel Power MOSFET designed for demanding applications. This surface mount device offers a Drain-Source Voltage (Vds) of 55V and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 190W (Tc). Featuring a low Rds(on) of 8.2mOhm at 52A and 10V, this MOSFET utilizes advanced silicon technology for high efficiency. The gate charge (Qg) is rated at 105 nC (max) @ 10V, and input capacitance (Ciss) is 2620 pF (max) @ 25V. The IPB80N06S2L09ATMA1 is packaged in a PG-TO263-3-2 (TO-263AB) and supplied on tape and reel. This component is suitable for use in automotive and industrial power management systems. Operating temperature range is -55°C to 175°C (TJ) with a maximum gate-source voltage of ±20V.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 52A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 125µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2620 pF @ 25 V |
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