IPB80N06S2L05ATMA1
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N06S2L05ATMA1 is a surface-mount N-channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 80 A at 25°C. The device offers an exceptionally low on-resistance (Rds On) of 4.5 mOhm at 80 A and 10 V, facilitating efficient power transfer. With a maximum power dissipation of 300 W at 25°C (Tc), it is suitable for demanding thermal environments. Key electrical characteristics include a gate charge (Qg) of 230 nC at 10 V and input capacitance (Ciss) of 5700 pF at 25 V. The operating temperature range is from -55°C to 175°C (TJ). Packaged in a TO-263-3 (D2PAK) form factor, supplied on tape and reel, this MOSFET is utilized across industries such as automotive, industrial power control, and server power supplies.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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