IPB80N06S208ATMA2
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N06S208ATMA2 is a high-performance N-channel power MOSFET in a PG-TO263-3-2 package. This device offers a 55 V drain-source voltage and a continuous drain current of 80 A at 25°C (Tc), with a maximum power dissipation of 215 W (Tc). The extremely low on-resistance is rated at 7.7 mOhm at 58 A and 10 V gate drive. Key parameters include a gate charge of 96 nC (max) at 10 V and an input capacitance of 2860 pF (max) at 25 V. Operating across a junction temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications in automotive, industrial power supplies, and motor control systems. The TO-263-3 surface mount package ensures efficient thermal management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2860 pF @ 25 V |
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