IPB80N06S207ATMA4
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N06S207ATMA4 is a surface-mount N-channel MOSFET designed for high-performance power applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 250W. The low on-resistance (Rds On) of 6.3mOhm at 68A and 10V drive voltage, coupled with a typical gate charge (Qg) of 110 nC, ensures efficient switching. The device operates within an extended temperature range of -55°C to 175°C and is supplied in a TO-263-3, D2PAK package, suitable for demanding thermal management. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and renewable energy systems requiring robust power handling capabilities.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 68A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 180µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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