IPB80N06S207ATMA1
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N06S207ATMA1 is an N-channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) capability of 80A at 25°C (Tc). The low on-resistance of 6.3mOhm at 68A and 10V drive voltage ensures efficient power transfer. With a maximum power dissipation of 250W (Tc), it is suitable for high-power switching solutions. The device is housed in a PG-TO263-3-2 surface mount package, facilitating integration into compact designs. Key characteristics include a gate charge (Qg) of 110 nC and input capacitance (Ciss) of 3400 pF at 25V. This MOSFET is utilized across various industries including automotive, industrial power supplies, and motor control systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 68A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 180µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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