IPB80N06S205ATMA1
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB80N06S205ATMA1, offers a 55V drain-source voltage and a continuous drain current of 80A at 25°C. This surface-mount device, packaged in a TO-263-3 (D2PAK), features a low on-resistance of 4.8mOhm at 80A and 10V Vgs, with a maximum power dissipation of 300W. Key parameters include a gate charge (Qg) of 170 nC at 10V and an input capacitance (Ciss) of 5110 pF at 25V. The device operates across a temperature range of -55°C to 175°C. This component is suitable for applications in automotive power management and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5110 pF @ 25 V |
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