IPB80N04S306ATMA1
MOSFET N-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N04S306ATMA1 is an N-Channel power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 40V and a continuous drain current (Id) capability of 80A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The low on-resistance (Rds On) of 5.4mOhm at 80A and 10V gate drive voltage, coupled with a gate charge (Qg) of 47 nC at 10V, ensures efficient switching performance.
Utilizing advanced MOSFET technology, the IPB80N04S306ATMA1 offers a high maximum junction temperature of 175°C, making it suitable for operation in challenging thermal environments. The surface mount PG-TO263-3-2 package provides a compact footprint for PCB integration. This component finds application in power management, automotive systems, and industrial motor control. It is supplied in tape and reel packaging for automated assembly.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 52µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
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