IPB80N04S304ATMA1
MOSFET N-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N04S304ATMA1 is an N-channel Power MOSFET designed for demanding applications. This surface mount component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 3.8mOhm at 80A and 10V gate drive. Key characteristics include a gate charge (Qg) of 80 nC (max) at 10V and an input capacitance (Ciss) of 5200 pF (max) at 25V. The power dissipation (Pd) is rated at 136W (Tc). Packaged in a PG-TO263-3-2 (TO-263-3, D2PAK) and supplied on tape and reel, this MOSFET is suitable for high-power switching applications across various industries including automotive and industrial power systems. Operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |
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