IPB80N04S303ATMA1
MOSFET N-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-channel power MOSFET, part number IPB80N04S303ATMA1, offers a 40V drain-source voltage and a continuous drain current of 80A at 25°C. This device features a low on-resistance of 3.2mOhm at 80A and 10V Vgs, with a maximum power dissipation of 188W. The TO-263-3-2 surface mount package, also known as PG-TO263-3-2 or D2PAK, is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 7300 pF at 25V. Operating temperature range is from -55°C to 175°C (TJ). This component finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 120µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 25 V |
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