IPB80N04S2L03ATMA1
MOSFET N-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N04S2L03ATMA1 is a 40V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a low on-resistance of 3.1mOhm at 80A and 10V Vgs, facilitating reduced conduction losses. With a continuous drain current capability of 80A at 25°C and a maximum power dissipation of 300W, it is suitable for demanding power conversion circuits. The IPB80N04S2L03ATMA1 utilizes a TO-263-3 (D2PAK) surface mount package, offering robust thermal performance and ease of integration in automated assembly processes. Key electrical characteristics include a gate charge of 213 nC at 10V and an input capacitance of 6000 pF at 25V. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is engineered for reliability in automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 213 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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