IPB80N04S2H4ATMA1
MOSFET N-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N04S2H4ATMA1 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) capability of 80 A at 25°C, with a maximum power dissipation of 300 W. The low on-resistance of 3.7 mOhm at 80 A and 10 V gate drive ensures efficient power transfer. Its surface mount TO-263-3 package facilitates streamlined assembly processes. With a gate charge (Qg) of 148 nC and input capacitance (Ciss) of 4400 pF, it is optimized for fast switching. This MOSFET is suitable for use in automotive, industrial power control, and renewable energy systems. The device operates across a wide temperature range from -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 148 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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