IPB80N03S4L03ATMA1
MOSFET N-CH 30V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N03S4L03ATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 94W (Tc). The ultra-low on-resistance (Rds On) of 3.3mOhm at 80A and 10V Vgs, combined with a low gate charge (Qg) of 75 nC at 10V, ensures minimal conduction and switching losses.
The IPB80N03S4L03ATMA1 utilizes a surface mount PG-TO263-3-2 package, offering excellent thermal performance and ease of integration into automated assembly processes. Its robust construction supports an operating temperature range of -55°C to 175°C (TJ). This component is suitable for demanding applications in automotive, industrial power supplies, and electric vehicle charging infrastructure. The MOSFET is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 45µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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