IPB80N03S4L02ATMA1
MOSFET N-CH 30V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB80N03S4L02ATMA1, is designed for high-efficiency power switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 136W (Tc). The low on-resistance of 2.4mOhm at 80A and 10V gate-source voltage, coupled with a gate charge of 140 nC at 10V, ensures minimal conduction and switching losses.
The TO-263-3 (D2PAK) surface mount package facilitates efficient thermal management and board integration. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for demanding environments. Key parameters include a maximum gate-source voltage of ±16V and a threshold voltage of 2.2V at 90µA. Applications span automotive power management, industrial power supplies, and motor control systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 90µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9750 pF @ 25 V |
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