IPB79CN10N G
MOSFET N-CH 100V 13A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB79CN10N-G is an N-Channel Power MOSFET featuring a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C. This device boasts a low on-resistance (Rds On) of 79mOhm at 13A and 10V gate-source voltage, ensuring efficient power transfer. The MOSFET is housed in a TO-263-3, D2PAK package, facilitating surface mounting. Key parameters include a gate charge (Qg) of 11 nC at 10V and an input capacitance (Ciss) of 716 pF at 50V. With a maximum power dissipation of 31W (Tc) and an operating temperature range of -55°C to 175°C, this component is well-suited for applications in automotive, industrial power control, and power supply designs.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 12µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 716 pF @ 50 V |
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