IPB77N06S3-09
MOSFET N-CH 55V 77A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series IPB77N06S3-09 is an N-Channel power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage and a continuous drain current rating of 77A at 25°C (Tc), with a maximum power dissipation of 107W (Tc). The low on-resistance of 8.8mOhm at 39A and 10V gate drive voltage, coupled with a gate charge of 103 nC at 10V, ensures efficient switching performance. Operating across a temperature range of -55°C to 175°C (TJ), the IPB77N06S3-09 utilizes advanced MOSFET technology. It is supplied in a PG-TO263-3-2 package, suitable for surface mounting, and is available on a Tape & Reel (TR). This device is commonly employed in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 39A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 55µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5335 pF @ 25 V |
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