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IPB77N06S212ATMA1

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IPB77N06S212ATMA1

MOSFET N-CH 55V 77A TO263-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPB77N06S212ATMA1 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain current (Id) capability of 77 A at 25°C (Tc). With a maximum Rds On of 11.7 mOhm at 38 A and 10 V, it minimizes conduction losses. The MOSFET offers a low gate charge of 60 nC at 10 V and an input capacitance (Ciss) of 1770 pF at 25 V, facilitating fast switching performance. Its robust design includes a maximum power dissipation of 158 W (Tc) and an operating temperature range of -55°C to 175°C (TJ). The device is housed in a PG-TO263-3-2 package, suitable for surface mounting, and is supplied in Tape & Reel (TR) packaging. This component finds application in automotive, industrial power supplies, and motor control systems.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C77A (Tc)
Rds On (Max) @ Id, Vgs11.7mOhm @ 38A, 10V
FET Feature-
Power Dissipation (Max)158W (Tc)
Vgs(th) (Max) @ Id4V @ 93µA
Supplier Device PackagePG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1770 pF @ 25 V

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