IPB70N12S311ATMA1
MOSFET N-CHANNEL_100+Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB70N12S311ATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 120 V drain-source voltage and a continuous drain current of 70 A at 25°C, with a maximum power dissipation of 125 W at the case temperature. The device offers a low on-resistance of 12.1 mOhm at 70 A and 10 V Vgs, achieved with a 10 V gate drive. Key parameters include a gate charge of 77 nC at 10 V and input capacitance of 5550 pF at 25 V. The IPB70N12S311ATMA1 is housed in a surface-mount TO-263-3-2 (PG-TO263-3-2) package, suitable for high-density board designs. Qualified to AEC-Q101, this MOSFET is utilized in automotive, industrial power control, and electric vehicle charging systems. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 83µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5550 pF @ 25 V |
| Qualification | AEC-Q101 |
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