IPB70N04S3-07
MOSFET N-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB70N04S3-07. This surface mount device features a 40V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc). The device exhibits a low on-resistance of 6.2mOhm at 70A and 10V gate-source voltage, with a maximum power dissipation of 79W (Tc). Key parameters include a gate charge of 40nC (max) at 10V and input capacitance of 2700pF (max) at 25V. The TO-263-3, D2PAK package is supplied on tape and reel. This component is suitable for high-power switching applications in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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