IPB65R380C6ATMA1
MOSFET N-CH 650V 10.6A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPB65R380C6ATMA1, offers a 650V drain-source breakdown voltage and a continuous drain current capability of 10.6A at 25°C (Tc). This TO-263-3 D2PAK package device features a maximum on-resistance of 380mOhm at 3.2A and 10V Vgs. With a gate charge of 39 nC (max) and input capacitance of 710 pF (max), it is suitable for high-efficiency power conversion applications. Key parameters include a maximum power dissipation of 83W (Tc) and an operating temperature range of -55°C to 150°C (TJ). This component is widely utilized in server power supplies, industrial power supplies, and lighting applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |