IPB65R280E6ATMA1
MOSFET N-CH 650V 13.8A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ E6 series N-Channel Power MOSFET, part number IPB65R280E6ATMA1. This device features a 650V drain-source breakdown voltage and a continuous drain current of 13.8A at 25°C (Tc). The MOSFET offers a maximum on-resistance (Rds On) of 280mOhm at 4.4A and 10V Vgs. Key parameters include a gate charge (Qg) of 45 nC (max) at 10V and an input capacitance (Ciss) of 950 pF (max) at 100V. Designed for efficient power conversion, it is housed in a TO-263-3, D2PAK surface-mount package, suitable for applications in power supplies, industrial motor control, and lighting. The maximum power dissipation is 104W (Tc) with an operating temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ E6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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