IPB65R225C7ATMA2
MOSFET N-CH 650V 11A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C7 series N-Channel Power MOSFET, part number IPB65R225C7ATMA2, offers a 650V breakdown voltage and 11A continuous drain current at 25°C. This surface mount device, packaged in a TO-263-3 (PG-TO263-3), features a maximum Rds(on) of 225mOhm at 4.8A and 10V Vgs. The device exhibits a typical gate charge of 20nC at 10V and an input capacitance of 996pF at 400V. With a maximum power dissipation of 63W (Tc), it operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply, lighting, and industrial sectors.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 996 pF @ 400 V |
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