IPB65R225C7ATMA1
MOSFET N-CH 650V 11A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ C7 series N-channel power MOSFET, part number IPB65R225C7ATMA1, offers a 650 V breakdown voltage with a continuous drain current capability of 11 A at 25°C (Tc). This device features a high power dissipation of 63 W (Tc) and a low on-resistance of 225 mOhm maximum at 4.8 A and 10 V gate drive. With a gate charge of 20 nC typical at 10 V and input capacitance of 996 pF maximum at 400 V, it is designed for efficient switching applications. The MOSFET is housed in a TO-263-3, D2PAK package suitable for surface mounting. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in server power supplies, industrial power supplies, and photovoltaic inverters.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 996 pF @ 400 V |