IPB65R190CFDATMA1
MOSFET N-CH 650V 17.5A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ N-Channel Power MOSFET, part number IPB65R190CFDATMA1, offers 650V drain-source breakdown voltage and a continuous drain current of 17.5A at 25°C (Tc). This device features a low on-resistance of 190mOhm maximum at 7.3A and 10V Vgs, with a gate charge of 68 nC maximum at 10V Vgs. The input capacitance (Ciss) is 1850 pF maximum at 100V Vds. Designed for surface mounting in the TO-263-3, D2PAK package, it operates within a temperature range of -55°C to 150°C. With a maximum power dissipation of 151W (Tc), this MOSFET is suitable for applications in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 730µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V |