IPB65R125C7ATMA2
MOSFET N-CH 650V 18A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ C7 series N-Channel Power MOSFET, part number IPB65R125C7ATMA2. This device features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 18A at 25°C (Tc), with a maximum power dissipation of 101W (Tc). The Rds On is specified at 125mOhm maximum for an Id of 8.9A and Vgs of 10V. The component utilizes a surface mount PG-TO263-3 package. Key characteristics include a gate charge (Qg) of 35 nC (max) at 10V and an input capacitance (Ciss) of 1670 pF (max) at 400V. This MOSFET is suitable for applications requiring high voltage and efficient switching, such as in power supplies and solar inverters. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 101W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 440µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 400 V |
Request a Quote
Clients Also Buy
IPD65R225C7ATMA1
MOSFET N-CH 650V 11A TO252-3
IPL65R070C7AUMA1
MOSFET N-CH 650V 28A 4VSON
IPB65R045C7ATMA2
MOSFET N-CH 650V 46A TO263-3
