IPB65R125C7ATMA1
MOSFET N-CH 650V 18A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel CoolMOS™ C7 series power MOSFET, part number IPB65R125C7ATMA1. This device features a 650V drain-source breakdown voltage and a continuous drain current of 18A at 25°C ambient. The MOSFET offers a low on-resistance of 125mOhm maximum at 8.9A and 10V gate-source voltage. Key parameters include a gate charge of 35 nC maximum and input capacitance of 1670 pF maximum. Designed for surface mounting, it is housed in a TO-263-3, D2PAK package. Maximum power dissipation is rated at 101W. This component is suitable for applications in power supplies, server power, and renewable energy systems.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 101W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 440µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 400 V |