IPB65R110CFDATMA1
MOSFET N-CH 650V 31.2A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ series N-Channel Power MOSFET, part number IPB65R110CFDATMA1. This surface mount device features a Drain to Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 31.2 A at 25°C (Tc). The static drain-source on-resistance (Rds On) is a maximum of 110 mOhm at 12.7 A and 10 V. Key parameters include a maximum gate charge (Qg) of 118 nC at 10 V and maximum input capacitance (Ciss) of 3240 pF at 100 V. The device offers a maximum power dissipation of 277.8 W (Tc) and operates within an ambient temperature range of -55°C to 150°C (TJ). The package is a TO-263-3, D2PAK configuration, supplied on Tape & Reel (TR). This component is suitable for applications in power supplies and industrial power conversion.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V |
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