IPB65R099C6ATMA1
MOSFET N-CH 650V 38A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPB65R099C6ATMA1, features a 650 V drain-source voltage and a continuous drain current of 38 A at 25°C (Tc). This surface mount device, housed in a TO-263-3, D2PAK package, offers a maximum on-resistance of 99 mOhm at 12.8 A and 10 V Vgs. With a maximum power dissipation of 278 W (Tc), it utilizes MOSFET technology and has a typical gate charge of 127 nC at 10 V. The IPB65R099C6ATMA1 is suitable for applications in power supply units, industrial power systems, and electric vehicle charging infrastructure. The device operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 12.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 100 V |
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