IPB65R095C7ATMA1
MOSFET N-CH 650V 24A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPB65R095C7ATMA1 is a 650V N-channel Power MOSFET from the CoolMOS™ C7 series, packaged in a TO-263-3 (D2PAK) surface mount configuration. This device features a maximum continuous drain current of 24A (Tc) and a low on-resistance of 95mOhm at 11.8A and 10V Vgs. With a maximum power dissipation of 128W (Tc) and a gate charge of 45nC at 10V, it is suitable for demanding applications. The input capacitance (Ciss) is rated at 2140pF at 400V. This component is commonly utilized in power supply units, server power, solar inverters, and industrial power supplies. It operates within a temperature range of -55°C to 150°C (TJ) and is supplied in tape and reel packaging.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 11.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 590µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2140 pF @ 400 V |
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