IPB65R045C7ATMA1
MOSFET N-CH 650V 46A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C7 series N-channel power MOSFET, part number IPB65R045C7ATMA1. This device features a 650 V drain-source breakdown voltage and a continuous drain current rating of 46 A at 25°C (Tc). With a maximum on-resistance of 45 mOhm at 24.9 A and 10 V Vgs, it offers efficient switching performance. The MOSFET is housed in a TO-263-3, D2PAK package for surface mounting and supports a maximum power dissipation of 227 W (Tc). Key parameters include a gate charge of 93 nC (max) at 10 V and an input capacitance of 4340 pF (max) at 400 V. This component is suitable for applications in power supply units, server power, industrial power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 24.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 227W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.25mA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 400 V |
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