IPB60R950C6ATMA1
MOSFET N-CH 600V 4.4A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 N-Channel Power MOSFET, part number IPB60R950C6ATMA1, offers a 600V drain-to-source voltage and 4.4A continuous drain current at 25°C. This surface mount device, packaged in a TO-263-3, D2PAK, features a maximum on-resistance of 950mOhm at 1.5A and 10V gate-source voltage. Key parameters include a gate charge of 13 nC and input capacitance of 280 pF. With 37W maximum power dissipation, it is suitable for high-voltage applications across power supply, lighting, and industrial automation sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™ C6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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