IPB60R600P6ATMA1
MOSFET N-CH 600V 7.3A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPB60R600P6ATMA1, a CoolMOS™ P6 series N-Channel Power MOSFET, offers a 600V drain-source breakdown voltage. This component features a continuous drain current capability of 7.3A (Tc) with a maximum power dissipation of 63W (Tc). The Rds(on) is specified at a maximum of 600mOhm at 2.4A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 12 nC (max) at 10V and input capacitance (Ciss) of 557 pF (max) at 100V. The device is housed in a TO-263-3, D2PAK package, suitable for surface mounting. It is available on tape and reel, operating across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in power supply and motor control applications.
Additional Information
Series: CoolMOS™ P6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 557 pF @ 100 V |
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