IPB60R600CPATMA1
MOSFET N-CH 600V 6.1A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series N-Channel Power MOSFET, part number IPB60R600CPATMA1. This device features a 600V drain-source breakdown voltage and a continuous drain current of 6.1A at 25°C (Tc). The Rds(on) is specified at a maximum of 600mOhm at 3.3A, 10V. Designed for surface mounting in a TO-263-3, D2PAK package, it offers a maximum power dissipation of 60W (Tc). Key parameters include a gate charge (Qg) of 27 nC (max) at 10V and input capacitance (Ciss) of 550 pF (max) at 100V. This component is suitable for applications in power supplies, server and telecom power, and industrial power.
Additional Information
Series: CoolMOS™ CPRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 220µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 100 V |
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