IPB60R520CPATMA1
MOSFET N-CH 600V 6.8A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series N-channel power MOSFET, IPB60R520CPATMA1, offers a 600V drain-source breakdown voltage and a continuous drain current of 6.8A at 25°C (Tc). This component features a maximum Rds(on) of 520mOhm at 3.8A and 10V gate-source voltage, with a gate charge (Qg) of 31nC at 10V. The input capacitance (Ciss) is rated at 630pF at 100V. With a maximum power dissipation of 66W (Tc), it is suitable for demanding applications. The IPB60R520CPATMA1 utilizes a TO-263-3, D2PAK surface mount package, operating across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in power supply, lighting, and industrial motor control applications.
Additional Information
Series: CoolMOS™ CPRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 100 V |
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