IPB60R380P6ATMA1
MOSFET N-CH 600V 10.6A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P6 series N-channel power MOSFET, part number IPB60R380P6ATMA1. This device features a Vds of 600V and a continuous drain current (Id) of 10.6A at 25°C (Tc). The Rds(on) is specified as 380mOhm maximum at 3.8A and 10V Vgs. The IPB60R380P6ATMA1 is housed in a TO-263-3, D2PAK package, enabling surface mount assembly. Maximum power dissipation is 83W (Tc). Key parameters include a gate charge (Qg) of 19 nC maximum at 10V Vgs and input capacitance (Ciss) of 877 pF maximum at 100V Vds. This component is commonly utilized in power factor correction, switch-mode power supplies, and general purpose power switching applications.
Additional Information
Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 320µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 877 pF @ 100 V |
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