IPB60R360CFD7ATMA1
MOSFET N-CH 600V 7A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CFD7 series N-Channel Power MOSFET, part number IPB60R360CFD7ATMA1. This surface mount device offers a 600V drain-source breakdown voltage and a continuous drain current of 7A at 25°C (Tc), with a maximum power dissipation of 43W (Tc). It features a low on-resistance of 360mOhm at 2.9A and 10V, and a typical gate charge of 14nC at 10V. Input capacitance (Ciss) is rated at 679pF maximum at 400V. The device is packaged in a PG-TO263-3-2 (TO-263-3, D2PAK) and supplied on tape and reel. Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supply units, server applications, and industrial power systems.
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 140µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 679 pF @ 400 V |
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