IPB60R330P6ATMA1
MOSFET N-CH 600V 12A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P6 series N-Channel Power MOSFET, part number IPB60R330P6ATMA1, is engineered for high-efficiency power conversion applications. This device offers a 600V breakdown voltage (Vdss) and a continuous drain current capability (Id) of 12A at 25°C case temperature, dissipating up to 93W. The IPB60R330P6ATMA1 features a low on-resistance (Rds On) of 330mOhm at 4.5A and 10V gate drive, with a typical gate charge (Qg) of 22 nC. Its high input capacitance (Ciss) of 1010 pF at 100V is optimized for switching performance. Packaged in a TO-263-3 (D2PAK) for surface mounting, this MOSFET is suitable for demanding applications across power supplies, industrial automation, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 370µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 100 V |
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