IPB60R299CPATMA1
MOSFET N-CH 600V 11A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series N-channel power MOSFET, part number IPB60R299CPATMA1. This component features a 600V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C (Tc). The low on-resistance of 299mOhm maximum at 6.6A, 10V gate-source voltage, coupled with a 96W maximum power dissipation (Tc), makes it suitable for demanding applications. With a surface mount TO-263-3, D2PAK package, it offers efficient thermal performance. Key electrical characteristics include a gate charge of 29 nC maximum at 10V and input capacitance of 1100 pF maximum at 100V. This device is engineered for use in power supply units, server power, and industrial applications.
Additional Information
Series: CoolMOS™ CPRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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