IPB60R299CPAATMA1
MOSFET N-CH 600V 11A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ IPB60R299CPAATMA1 is a 600V N-channel power MOSFET designed for demanding applications. With a continuous drain current of 11A (Tc) and a low Rds(on) of 299mOhm at 6.6A and 10V, this device offers efficient switching performance. The PG-TO263-3-2 surface mount package facilitates ease of integration into automotive and industrial power systems. Key parameters include a gate charge (Qg) of 29 nC at 10V and input capacitance (Ciss) of 1100 pF at 100V. This component is qualified to AEC-Q101 standards, ensuring reliability in automotive environments. Its maximum power dissipation is rated at 96W (Tc), and it operates across a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
| Qualification | AEC-Q101 |
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