IPB60R280CFD7ATMA1
MOSFET N-CH 600V 9A TO263-3-2Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CFD7 series N-channel power MOSFET, part number IPB60R280CFD7ATMA1. This TO-263-3-2 surface mount device features a 600V drain-source voltage and a continuous drain current of 9A at 25°C. With a maximum on-resistance of 280mOhm at 3.6A and 10V Vgs, it offers efficient switching performance. The device has a gate charge of 18 nC maximum and an input capacitance of 807 pF maximum. Power dissipation is rated at 51W at 25°C case temperature. Operating temperature range is -55°C to 150°C. This component is suitable for applications in server power supplies, industrial power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 180µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 807 pF @ 400 V |
Request a Quote
Clients Also Buy
IPB60R040CFD7ATMA1
MOSFET N-CH 600V 50A TO263-3
IPL60R060CFD7AUMA1
MOSFET N CH
IPW60R070CFD7XKSA1
MOSFET N-CH 650V 31A TO247-3
