IPB60R280C6ATMA1
MOSFET N-CH 600V 13.8A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ C6 series IPB60R280C6ATMA1 is an N-Channel Power MOSFET featuring a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 13.8A at 25°C (Tc). This device offers a maximum on-resistance (Rds On) of 280mOhm at 6.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 43 nC (max) at 10V and an input capacitance (Ciss) of 950 pF (max) at 100V. The IPB60R280C6ATMA1 is housed in a TO-263-3, D2PAK surface mount package, enabling efficient thermal management with a maximum power dissipation of 104W (Tc). This component is suitable for applications in power factor correction, switch-mode power supplies, and lighting. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
Request a Quote
Clients Also Buy
IPD60R3K3C6ATMA1
MOSFET N-CH 600V 1.7A TO252-3
IPD65R1K4C6ATMA1
MOSFET N-CH 650V 3.2A TO252-3
IPD60R950C6ATMA1
MOSFET N-CH 600V 4.4A TO252-3
