IPB60R250CPATMA1
MOSFET N-CH 600V 12A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CP series N-Channel power MOSFET, part number IPB60R250CPATMA1. This surface mount device features a 600V drain-source voltage and a continuous drain current of 12A at 25°C (Tc), with a maximum power dissipation of 104W (Tc). The Rds(on) is specified at 250mOhm maximum for a gate-source voltage of 10V and a drain current of 7.8A. Key parameters include a gate charge of 35 nC (max) at 10V and an input capacitance of 1200 pF (max) at 100V. The MOSFET is housed in a PG-TO263-3-2 package and operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch-mode power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ CPRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 100 V |
Request a Quote
Clients Also Buy
IPB60R099CPATMA1
MOSFET N-CH 600V 31A TO263-3
IPD60R385CPATMA1
MOSFET N-CH 600V 9A TO252-3
IPL60R199CPAUMA1
MOSFET N-CH 600V 16.4A 4VSON
