IPB60R230P6ATMA1
MOSFET N-CH 600V 16.8A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P6 series N-Channel Power MOSFET, part number IPB60R230P6ATMA1, offers a 600V drain-source breakdown voltage and 16.8A continuous drain current at 25°C (Tc). This surface-mount device features a maximum on-resistance of 230mOhm at 6.4A and 10V Vgs. Key characteristics include a gate charge of 31 nC (max) at 10V Vgs and input capacitance of 1450 pF (max) at 100V Vds. The IPB60R230P6ATMA1 is housed in a PG-TO263-3-1 package, also known as TO-263-4, D2PAK, and supports a maximum power dissipation of 126W (Tc). This component is suitable for applications in power supply units and industrial power conversion systems.
Additional Information
Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 6.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 126W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 530µA |
| Supplier Device Package | PG-TO263-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 100 V |
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