IPB60R190P6ATMA1
MOSFET N-CH 600V 20.2A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P6 series N-Channel Power MOSFET, part number IPB60R190P6ATMA1, offers a 600V drain-source breakdown voltage and a continuous drain current of 20.2A at 25°C (Tc). This surface mount device features a maximum on-resistance of 190mOhm at 7.6A and 10V gate-source voltage. The TO-263-3, D2PAK package facilitates efficient thermal management with a maximum power dissipation of 151W (Tc). Key characteristics include a gate charge of 37 nC at 10V and an input capacitance of 1750 pF at 100V. This component is suitable for applications in power supply units, industrial power systems, and renewable energy inverters.
Additional Information
Series: CoolMOS™ P6RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 630µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 100 V |
Request a Quote
Clients Also Buy
IPP60R190P6XKSA1
MOSFET N-CH 600V 20.2A TO220-3
IPA60R280P6XKSA1
MOSFET N-CH 600V 13.8A TO220-FP
IPL60R360P6SATMA1
MOSFET N-CH 600V 11.3A 8THINPAK
