IPB60R190C6ATMA1
MOSFET N-CH 600V 20.2A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 N-Channel Power MOSFET, part number IPB60R190C6ATMA1, offers exceptional performance for high-voltage applications. This device features a 600V drain-source breakdown voltage and a continuous drain current of 20.2A at 25°C (Tc), with a maximum power dissipation of 151W (Tc). The low on-resistance of 190mOhm at 9.5A and 10V gate-source voltage, coupled with a gate charge of 63 nC at 10V, contributes to efficient switching characteristics. Designed for surface mounting in the TO-263-3, D2PAK package, this MOSFET is suitable for demanding power supply designs in industries such as consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C (TJ), ensuring reliability across various environmental conditions.
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 630µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V |
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