IPB60R170CFD7ATMA1
MOSFET N-CH 600V 14A TO263-3-2Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CFD7 series N-Channel Power MOSFET, part number IPB60R170CFD7ATMA1. This device features a 600V drain-source voltage and a continuous drain current of 14A (Tc) at 25°C, with a maximum power dissipation of 75W (Tc). The Rds(on) is specified at 170mOhm maximum at 6A and 10V gate drive. It is housed in a PG-TO263-3-2 surface mount package, suitable for demanding applications across power factor correction, switch-mode power supplies, and solar inverters. Key parameters include a Ciss of 1190pF maximum at 400V and a Qg of 28nC maximum at 10V. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 300µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 400 V |
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