IPB60R165CPATMA1
MOSFET N-CH 600V 21A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series N-Channel Power MOSFET, part number IPB60R165CPATMA1. This device features a 600V drain-source breakdown voltage and a continuous drain current of 21A at 25°C case temperature, with a maximum power dissipation of 192W (Tc). The on-resistance (Rds(on)) is specified at 165mOhm maximum for a drain current of 12A and gate-source voltage of 10V. Key parameters include a gate charge (Qg) of 52 nC maximum at 10V and input capacitance (Ciss) of 2000 pF maximum at 100V. Designed for surface mounting, it is supplied in a TO-263-3, D2PAK package. This component is utilized in applications such as switch-mode power supplies and industrial power systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CPRoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 790µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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