IPB60R160C6ATMA1
MOSFET N-CH 600V 23.8A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 series N-Channel Power MOSFET, part number IPB60R160C6ATMA1. This device features a 600 V drain-source voltage (Vdss) and a continuous drain current of 23.8 A at 25°C (Tc). The Rds(on) is specified as 160 mOhm maximum at 11.3 A and 10 V gate-source voltage (Vgs). With a maximum power dissipation of 176 W (Tc), this MOSFET is housed in a TO-263-3, D2PAK surface mount package, supplied on tape and reel. Key parameters include a maximum gate charge (Qg) of 75 nC at 10 V and an input capacitance (Ciss) of 1660 pF (max) at 100 V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply units and industrial power conversion.
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 750µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 100 V |
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